CNTFET-Based Memory Design

CNTFET-Based Memory Design

Shashi Bala, Mamta Khosla, Raj Kumar
Copyright: © 2020 |Pages: 21
DOI: 10.4018/978-1-7998-1393-4.ch002
OnDemand:
(Individual Chapters)
Available
$37.50
Current Special Offers
No Current Special Offers
TOTAL SAVINGS: $37.50

Abstract

As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM. In this chapter, the performance and stability of CNTFET-based SRAM cells have been analyzed. Numerous figures of merit (FOM) (e.g., read/write noise margin, power dissipation, and read/write delay) have been considered to analyze the performance of CNTFET-based. The static power consumption in CNTFET-based SRAM cell was compared with conventional complementary metal oxide semiconductor (CMOS)-based SRAM cell. Conventional CNTFET and tunnel CNTFET-based SRAMs have also been considered for comparison. From the simulation results, it is observed that tunnel CNTFET SRAM cells have shown improved FOM over conventional CNTFET 6T SRAM cells without losing stability.
Chapter Preview
Top

2. Carbon Nanotube Field-Effect Transistor (Cntfet)

Carbon nanotube transistors may be considered as promising candidates for FETs due to exceptional electronic, mechanical and thermal properties of carbon nanotubes (CNTs) (Nardelli, Fattebert, Orlikowski, Roland, & Zhao, 2000; Avci, Rios, Kuhn & Young, 2011). CNTFET is having a similar device structure as Si-based MOSFET except for channel material, which is to be replaced by CNT of few nanometer diameters. Variable bandgap attributed to variable diameter of CNTFET makes it useful for different applications. In conventional MOSET, different materials have to be selected for different bandgaps. CNTFET requires low gate voltage as compared to conventional MOSFET (Pourfath, Mahdi, Kosina, & Selberherr, 2007; Koswatta, Nikonov, & Lundstrom, 2005). Therefore, CNTFETs are considered a highly promising candidate for future low power applications. According to their geometry CNTFET is of two types: planer and coaxial. Figure 1 (a) shows the planer CNTFET structure in which source and drain are connected through CNT that is utilized for channel instead of bulk silicon of substrate (Knoch & Appenzeller, 2008). Since CNT is cylindrical nanotube, coaxial geometry of CNTFET is also possible as shown in Figure 1(b). The planer CNTFETs are more popular and easily fabricated than coaxial attributed to their simplicity and compatibility with the manufacturing technology. The selection of geometry is based on its application (Auth & Plummer, 2008).

Complete Chapter List

Search this Book:
Reset