Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

Takuya Kaizawa (Hokkaido University, Japan), Mingyu Jo (Hokkaido University, Japan), Masashi Arita (Hokkaido University, Japan), Akira Fujiwara (NTT Corporation, Japan), Kenji Yamazaki (NTT Corporation, Japan), Yukinori Ono (NTT Corporation, Japan), Hiroshi Inokawa (Shizuoka University, Japan) and Yasuo Takahashi (Hokkaido University, Japan)
Copyright: © 2009 |Pages: 12
DOI: 10.4018/jnmc.2009040104
OnDemand PDF Download:
$37.50

Abstract

A highly functional Si nanodot array device that operates by means of single-electron effects was experimentally demonstrated. The device features many input gates, and many outputs can be attached. A nanodot array device with three input gates and two output terminals was fabricated on a silicon-on-insulator wafer using conventional Si MOS processes. Its feasibility was demonstrated by its operation as both a half adder and a full adder when the operation voltage was carefully selected.

Complete Article List

Search this Journal:
Reset
Volume 3: 4 Issues (2011)
Volume 2: 4 Issues (2010)
Volume 1: 4 Issues (2009)
View Complete Journal Contents Listing