Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs

Takuya Kaizawa (Hokkaido University, Japan), Mingyu Jo (Hokkaido University, Japan), Masashi Arita (Hokkaido University, Japan), Akira Fujiwara (NTT Corporation, Japan), Kenji Yamazaki (NTT Corporation, Japan), Yukinori Ono (NTT Corporation, Japan), Hiroshi Inokawa (Shizuoka University, Japan), Yasuo Takahashi (Hokkaido University, Japan) and Jung-Bum Choi (Chungbuk National University, Korea)
DOI: 10.4018/978-1-60960-186-7.ch008
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Abstract

A highly functional Si nanodot array device that operates by means of single-electron effects was experimentally demonstrated. The device features many input gates, and many outputs can be attached. A nanodot array device with three input gates and two output terminals was fabricated on a silicon-on-insulator wafer using conventional Si MOS processes. Its feasibility was demonstrated by its operation as both a half adder and a full adder when the operation voltage was carefully selected.
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Device Concept

Nanodot arrays should be the most effective structure for achieving low power consumption if we can implement high functionality. The larger the nanodot array, the more suitable it is for low power operation because the wiring is reduced more. Consequently, our ultimate goal is to build a very large nanodot array on which many input gates are attached so as to couple capacitively with many nanodots. It should also have many current output terminals because important, highly functional circuits, such as multibit adder circuits, generally need multiple outputs as well as multiple inputs.

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