HEMT for RF Circuits

HEMT for RF Circuits

Balwant Raj (Panjab University SSG Regional Centre Hoshiarpur, India) and Sukhleen Bindra Narang (Guru Nanak Dev University, India)
DOI: 10.4018/978-1-4666-6627-6.ch016
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Abstract

In this chapter, III-V compound semiconductors MESFET, HBT, and HEMT are described, including papers which report major achievements of the HEMT technologies in the fields of microwave, millimeter-wave, and digital Integrated Circuits (ICs). The important aspects of device physics, small-signal equivalent circuits for GaAs, and GaN-based HEMT are discussed. The authors present a comparative analysis of different analytical modeling techniques and show that the differences reflect the physical and technology differences of the tested microwave transistors. The purpose of this chapter is to facilitate the choice of the most appropriate strategy for each particular case. For that, the authors present a brief but thorough comparative study of analytical techniques developed for modeling different types of advanced microwave transistors: GaAs HEMTs, GaN HEMTs. The chapter shows that a crucial step for a successful modeling is to adapt accurately the small-signal equivalent circuit topology.
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History Of Mmic Technology

III-V compound semiconductors are used for MMIC because of its suitability for both high frequency transistors and low loss passive components.

  • 1962: 24 µm: Fabrication of transistor using GaAs was first carried out by Jim Tuner.

  • 1967: 4 µm: Producing 10 dB gain at 1 GHz.

  • 1971: 1 µm: EBL Technology (Electron Beam Lithography) given high gain at 1 GHz.

  • 1981: Horn buckle & Van Tuyl presented results for direct-coupled amplifier using transistors and level shifter diodes.

  • 1982: RFOW (Radio Frequency on Wafer).

  • 1984: High Power & High gain amplification techniques presented by Ayasli.

  • 1988: Small Signal Equivalent Circuit of FET for MMIC’s by Gilles, et.al.

  • 1990: Distributed amplifiers entered a new era when HEMTs become available, and the standards were redefined by the 5-100 GHz bandwidth by Majidy-Ahy.

  • Currently, new materials for MMIC such as InP, GaN on SiC, Si and diamond substrate have a evolution for high power, high frequency and high temperature applications of MMIC’s.

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