Thin Coating Deposition by Magnetron Sputtering

Thin Coating Deposition by Magnetron Sputtering

Peter Ifeolu Odetola (Tshwane University of Technology, South Africa), Patricia A. P. Popoola (Tshwane University of Technology, South Africa) and Philip Oladijo (Botswana International University of Science and Technology, Botswana)
DOI: 10.4018/978-1-5225-4194-3.ch015


Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.
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Demystification Of Physical Sputtering

From the perspective of definition, sputtering is a physical vapor deposition process of dislodging atoms from a solid target by energetic particle (typically inert ) bombardment. The atoms sputtered from the target are transfer to a strategically placed substrate and become condense there, thereby contributing to forming a thin-film coating.

Figure 1.

Sputtering features and associated parameters

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