Thin Coating Deposition by Magnetron Sputtering

Thin Coating Deposition by Magnetron Sputtering

Peter Ifeolu Odetola, Patricia A. P. Popoola, Philip Oladijo
DOI: 10.4018/978-1-5225-4194-3.ch015
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Abstract

Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.
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Demystification Of Physical Sputtering

From the perspective of definition, sputtering is a physical vapor deposition process of dislodging atoms from a solid target by energetic particle (typically inert 978-1-5225-4194-3.ch015.m02) bombardment. The atoms sputtered from the target are transfer to a strategically placed substrate and become condense there, thereby contributing to forming a thin-film coating.

Figure 1.

Sputtering features and associated parameters

978-1-5225-4194-3.ch015.f01

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