Welcome to the InfoSci Platform
Carbon Materials Based Ion Sensitive Field Effect Transistor (ISFET): The Emerging Potentials of Nanostructured Carbon-Based ISFET with High Sensitivity

Carbon Materials Based Ion Sensitive Field Effect Transistor (ISFET): The Emerging Potentials of Nanostructured Carbon-Based ISFET with High Sensitivity

Mohammad Javad Kiani, M. H. Shahrokh Abadi, Meisam Rahmani, Mohammad Taghi Ahmadi, F. K. Che Harun, S.N. Hedayat, S.H. Yaghoobian
Copyright: © 2017 |Pages: 27
ISBN13: 9781522507369|ISBN10: 1522507361|EISBN13: 9781522507376
DOI: 10.4018/978-1-5225-0736-9.ch013
Cite Chapter Cite Chapter

MLA

Kiani, Mohammad Javad, et al. "Carbon Materials Based Ion Sensitive Field Effect Transistor (ISFET): The Emerging Potentials of Nanostructured Carbon-Based ISFET with High Sensitivity." Handbook of Research on Nanoelectronic Sensor Modeling and Applications, edited by Mohammad Taghi Ahmadi, et al., IGI Global, 2017, pp. 334-360. https://doi.org/10.4018/978-1-5225-0736-9.ch013

APA

Kiani, M. J., Abadi, M. H., Rahmani, M., Ahmadi, M. T., Harun, F. K., Hedayat, S., & Yaghoobian, S. (2017). Carbon Materials Based Ion Sensitive Field Effect Transistor (ISFET): The Emerging Potentials of Nanostructured Carbon-Based ISFET with High Sensitivity. In M. Ahmadi, R. Ismail, & S. Anwar (Eds.), Handbook of Research on Nanoelectronic Sensor Modeling and Applications (pp. 334-360). IGI Global. https://doi.org/10.4018/978-1-5225-0736-9.ch013

Chicago

Kiani, Mohammad Javad, et al. "Carbon Materials Based Ion Sensitive Field Effect Transistor (ISFET): The Emerging Potentials of Nanostructured Carbon-Based ISFET with High Sensitivity." In Handbook of Research on Nanoelectronic Sensor Modeling and Applications, edited by Mohammad Taghi Ahmadi, Razali Ismail, and Sohail Anwar, 334-360. Hershey, PA: IGI Global, 2017. https://doi.org/10.4018/978-1-5225-0736-9.ch013

Export Reference

Mendeley
Favorite

Abstract

Graphene and SWCNT-based Ion Sensitive FET (ISFET) as a novel material with organic nature and ionic liquid gate is intrinsically sensitive to pH changes. pH is an important factor in enzymes stabilities which can affect the enzymatic reaction and broaden the number of enzyme applications. More accurate and consistent results of enzymes must be optimized to realize their full potential as catalysts accordingly. In this chapter, an appropriate structure to ISFET device is designed for the purpose of electrical measurement of different pH buffer solutions. Electrical detection model of each pH value is suggested using conductance modelling of monolayer graphene. In addition, ISFET based on nanostructured SWCNT is studied for the purpose of electrical detection of hydrogen ion concentrations. Electrical detection of hydrogen ion concentrations by modelling the conductance of SWCNT sheets is proposed. pH buffer as a function of gate voltage is assumed and sensing factor is defined. Finally, the proposed new approach improving the analytical model is compared with experimental data and shows good overall agreement.

Request Access

You do not own this content. Please login to recommend this title to your institution's librarian or purchase it from the IGI Global bookstore.