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All-Optical Switching and Logic-Gates Design Using Mode (Polarization)-Conversion in Micro-Ring Resonator

All-Optical Switching and Logic-Gates Design Using Mode (Polarization)-Conversion in Micro-Ring Resonator

Jayanta Kumar Rakshit, Gaurav Kumar Bharti
Copyright: © 2019 |Pages: 26
ISBN13: 9781522585312|ISBN10: 1522585311|ISBN13 Softcover: 9781522585329|EISBN13: 9781522585336
DOI: 10.4018/978-1-5225-8531-2.ch011
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MLA

Rakshit, Jayanta Kumar, and Gaurav Kumar Bharti. "All-Optical Switching and Logic-Gates Design Using Mode (Polarization)-Conversion in Micro-Ring Resonator." Contemporary Developments in High-Frequency Photonic Devices, edited by Siddhartha Bhattacharyya, et al., IGI Global, 2019, pp. 277-302. https://doi.org/10.4018/978-1-5225-8531-2.ch011

APA

Rakshit, J. K. & Bharti, G. K. (2019). All-Optical Switching and Logic-Gates Design Using Mode (Polarization)-Conversion in Micro-Ring Resonator. In S. Bhattacharyya, P. Debnath, A. Deyasi, & N. Dey (Eds.), Contemporary Developments in High-Frequency Photonic Devices (pp. 277-302). IGI Global. https://doi.org/10.4018/978-1-5225-8531-2.ch011

Chicago

Rakshit, Jayanta Kumar, and Gaurav Kumar Bharti. "All-Optical Switching and Logic-Gates Design Using Mode (Polarization)-Conversion in Micro-Ring Resonator." In Contemporary Developments in High-Frequency Photonic Devices, edited by Siddhartha Bhattacharyya, et al., 277-302. Hershey, PA: IGI Global, 2019. https://doi.org/10.4018/978-1-5225-8531-2.ch011

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Abstract

The realization of all-optical polarization switch and all-optical logic gates based on polarization-conversion on single silicon micro-ring resonator (MRR) is demonstrated. By adjusting the mode state of the input source as well as the pump light, the all-optical polarization switch, and hence, all-optical NOT, OR/NOR. AND-NAND logic gates are realized. The design is ultra-compact, ultrafast, and less optical power is required for all-optical polarization-conversion-based switch and logic gates, respectively. The MRR also shows outstanding performance as its Q (quality) factor is very high. The design is robust, simple, stable, easy-to-fabricate, and silicon-on-insulator (SOI) compatible. The structure is compatible for interconnects and capable for integrating in electronics as well as in plasmonics circuits.

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