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Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

Deep Kamal Kaur Randhawa, Paramjot Singh, Tarun
Copyright: © 2020 |Pages: 15
ISBN13: 9781799813934|ISBN10: 1799813932|ISBN13 Softcover: 9781799813941|EISBN13: 9781799813958
DOI: 10.4018/978-1-7998-1393-4.ch010
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MLA

Randhawa, Deep Kamal Kaur, et al. "Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs." Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET), edited by Balwinder Raj, et al., IGI Global, 2020, pp. 213-227. https://doi.org/10.4018/978-1-7998-1393-4.ch010

APA

Randhawa, D. K., Singh, P., & Tarun. (2020). Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs. In B. Raj, M. Khosla, & A. Singh (Eds.), Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) (pp. 213-227). IGI Global. https://doi.org/10.4018/978-1-7998-1393-4.ch010

Chicago

Randhawa, Deep Kamal Kaur, Paramjot Singh, and Tarun. "Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs." In Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET), edited by Balwinder Raj, Mamta Khosla, and Amandeep Singh, 213-227. Hershey, PA: IGI Global, 2020. https://doi.org/10.4018/978-1-7998-1393-4.ch010

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Abstract

Silicene is one of the most interesting nanomaterials. In this chapter, computational studies have been done on Silicene nanotube and nanoribbon-based FETs to analyze their transport properties. The FET is designed from armchair nanoribbon and single wall nanotube. The scattering region is capped by a dielectric and a metallic layer to form a gate. The conductance versus gate bias voltage, conductance versus temperature up to 2000K, and electrode temperature versus current characteristics are calculated and plotted along with the design of the equivalent model of the structure. Extended Huckel-based calculations were used, and the analysis shows the transport properties of both structures.

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