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Measurement of Junction Depth in Sub-Micron Device Using SIMS Technique for Performance Estimation in RF Range

Measurement of Junction Depth in Sub-Micron Device Using SIMS Technique for Performance Estimation in RF Range

Arpan Deyasi, Pampa Debnath
Copyright: © 2020 |Pages: 22
ISBN13: 9781799825845|ISBN10: 1799825841|ISBN13 Softcover: 9781799825876|EISBN13: 9781799825852
DOI: 10.4018/978-1-7998-2584-5.ch008
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MLA

Deyasi, Arpan, and Pampa Debnath. "Measurement of Junction Depth in Sub-Micron Device Using SIMS Technique for Performance Estimation in RF Range." Advancements in Instrumentation and Control in Applied System Applications, edited by Srijan Bhattacharya, IGI Global, 2020, pp. 129-150. https://doi.org/10.4018/978-1-7998-2584-5.ch008

APA

Deyasi, A. & Debnath, P. (2020). Measurement of Junction Depth in Sub-Micron Device Using SIMS Technique for Performance Estimation in RF Range. In S. Bhattacharya (Ed.), Advancements in Instrumentation and Control in Applied System Applications (pp. 129-150). IGI Global. https://doi.org/10.4018/978-1-7998-2584-5.ch008

Chicago

Deyasi, Arpan, and Pampa Debnath. "Measurement of Junction Depth in Sub-Micron Device Using SIMS Technique for Performance Estimation in RF Range." In Advancements in Instrumentation and Control in Applied System Applications, edited by Srijan Bhattacharya, 129-150. Hershey, PA: IGI Global, 2020. https://doi.org/10.4018/978-1-7998-2584-5.ch008

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Abstract

This chapter shows the measurement procedure of junction depth using SIMS method with detailed experimental procedure, and the result is verified by theoretical computation. SIMS profile is analytically characterized by Pearson's distribution function, and all the results together established the fact that the device can be utilized for operating as a diode in RF range; where ion dose is considered as a variable parameter with ion energy. Implanted impurity distribution profile is obtained as a function of depletion width from which junction depth can be evaluated. Straggle parameters and projected range profile near the ion energy range is computed for which depth is evaluated, and skewness & kurtosis are estimated to get a theoretical knowledge of all the moments assuming the Pearson IV distribution. Results suggest that distribution of atoms may be considered as Gaussian in nature.

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