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Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

Raj Kumar, Shashi Bala, Arvind Kumar
Copyright: © 2021 |Pages: 17
ISBN13: 9781799864677|ISBN10: 1799864677|ISBN13 Softcover: 9781799864684|EISBN13: 9781799864691
DOI: 10.4018/978-1-7998-6467-7.ch003
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MLA

Kumar, Raj, et al. "Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors." Innovative Applications of Nanowires for Circuit Design, edited by Balwinder Raj, IGI Global, 2021, pp. 54-70. https://doi.org/10.4018/978-1-7998-6467-7.ch003

APA

Kumar, R., Bala, S., & Kumar, A. (2021). Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors. In B. Raj (Ed.), Innovative Applications of Nanowires for Circuit Design (pp. 54-70). IGI Global. https://doi.org/10.4018/978-1-7998-6467-7.ch003

Chicago

Kumar, Raj, Shashi Bala, and Arvind Kumar. "Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors." In Innovative Applications of Nanowires for Circuit Design, edited by Balwinder Raj, 54-70. Hershey, PA: IGI Global, 2021. https://doi.org/10.4018/978-1-7998-6467-7.ch003

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Abstract

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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